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Venu Anand


  • Atmospheric pressure plasma chemical vapor deposition reactor for 100 mm wafers, optimized for minimum contamination at low gas flow rates, Venu Anand, Aswathi R. Nair, S. A. Shivashankar, and G. Mohan Rao, Applied Physics Letters 107, 094103 (2015)
  • On the purity of Atmospheric glow discharge plasma, Venu Anand and G.Mohan Rao IEEETrans.Plasma,37,1811(2009). .
  • Surface modification of PDMS using atmospheric glow discharge polymerization of tetrafluoroethane for immobilization of biomolecules, V Anand, S Ghosh, M Ghosh, GM Rao, R Railkar, RR Dighe, Applied Surface Science, 257, 20, 8378-8384, (2011). 
  • On the quality of hydrogenated amorphous silicon deposited by sputtering, Habibuddin Shaik, Venu Anand, Mohan Rao G, Materials Science in Semiconductor Processing 26, 367–373, (2014).
  • Effect of iodine concentration on the photovoltaic properties of dye sensitized solar cells for various I2/LiI ratios, Ambily Mathew, Venu Anand, G Mohan Rao, N Munichandraiah,ElectrochimicaActa,87,92–96,(2013).
  • Electrochemical co-deposition of bimetallic Pt–Ru nanoclusters dispersed on poly (3, 4-ethylenedioxythiophene) and electrocatalytic behavior for methanol oxidation, S Patra, S Dash, V Anand, CS Nimisha, GM Rao, N Munichandraiah, Materials Science and Engineering: B, 176, 10, 785-791, (2011).