K. L. Ganapathi, S. Bhattacharjee, S. Mohan and N. Bhat, “High Performance HfO2 Back Gated Multilayer MoS2 transistors," IEEE Electron Device Letters (EDL), vol. 37, 6, 797-800 (2016).
S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat, “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs”, Adv. Electron. Mater., 1600358, (2016).
*S. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat, ”Surface States Engineering of metal/MoS2 contacts using Sulfur Treatment for Reduced Contact Resistance and Variability," IEEE Transactions on Electron Devices (TED), vol. 63, 6, 2556-2562 (2016).(* Authors equally contributed).
S. Bhattacharjee, K. L. Ganapathi, D. N. Nath and N. Bhat, “Intrinsic limit for contact resistance in exfoliated multilayer MoS2 FET," IEEE Electron Device Letters, vol.37, No.1 (2016). (DOI:10.1109/LED.2015.2501323).
A. Suresh, K. L. Ganapathi and S. Uthanna, “Electrical, optical, structural and chemical properties of Al2TiO5 films for high- gate dielectric applications," Accepted with minor revision: Materials Science in Semiconductor Processing, 57, 137-146 (2016).
S. Mukhopadhyay, S. Mitra, Y. M Ding, K. L. Ganapathi, D. Misra, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C.S. Wajda, G.J Leusink, Effectof Post Plasma Oxidation on Ge Gate Stacks Interface Formation," ECS Transactions, vol. 72(4), 303-312 (2016).
H. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat and D.N. Nath, “Optical Phonon limited high field transport in layered materials" IEEETransactions on Electron Devices (TED), (2016). (DOI:10.1109/TED.2015.2508036).
*S. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat, ”Sulfur Treatment for Schottky Barrier Reduction in metal/ MoS2 contacts{ A new proposal for Contact Engineering on TMD's," (*Authors equally contributed)http://arxiv.org/abs/1508.03795.
K. L. Ganapathi, N. Bhat, and S. Mohan, “Influence of O2 flow rate HfO2 gate dielectrics for back gated graphene transistors," Semicond. Sci.Technol., vol. 29, 055007 (2014). (DOI: 10.1088/0268-1242/29/5/055007).
K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of HfO2 films for high transconductance back gated graphene transistors," Appl. Phys.Lett., vol. 103, 073105 (2013). (DOI: 10.1063/1.4818467).
M. A. Jithin, K. L. Ganapathi, N. Bhat, S. Mohan, Y. Morozumi, and S.Kaushal, “Pulsed DC Magnetron Sputtered Rutile TiO2 Thin Films for Next Generation DRAM Capacitors," Mater. Res. Soc. Symp. Proc., vol.1561 (DOI: 10.1557/opl.2013.823).
K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of oxygen flow rate for e-beam evaporated HfO2 films," Proc. Int. Conf. Emerging Electronics (ICEE), DOI: 10.1109/ICEmElec.2012.6636257, pp. 82-85, Dec.2012.
K. L. Ganapathi, S. Mukhopadhyay, S. Mitra, Y. M Ding, D. Misra, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C.S. Wajda, G.J Leusink, “Effect of Slot Plane Anetna Oxidation on Ge Gate Stacks Interface Formation," To be submitted to IEEE Transactions on Device and Materials Reliability (IEEE TDMR) .
*S. Bhattacharjee, *K. L. Ganapathi, S. Mohan and N. Bhat, “Functionalization free e-beam based 30 nm HfO2 top gate for high performance MoS2 FETs," To be submitted (* Authors equally contributed).
K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of TiN films for CMOS gate electrode applications," To be submitted.
K. L. Ganapathi, N. Bhat, and S. Mohan, “Reactive Electron Beam Evaporated Hafnium Oxide Films for Gate Dielectric Applications in 2-D materials," Manuscript in preparation.
