Z. Liu*, T. Sharma* and K. Sengupta, “80-110 GHz Broadband Linear PA with 33% peak PAE and Comparison of Stacked Common-Base and Common-Emitter PA in InP”, in IEEE Microwave Wireless Component Letters,2021
X. Y. Zhou, W. S. Chan, T. Sharma, W. J. Jie and J. Xia, "Harnessing Harmonics in Doherty Power Amplifiers [Application Notes]," in IEEE Microwave Magazine, vol. 22, no. 8, pp. 16-31, Aug. 2021
Z. Liu*, T. Sharma*, C. Chappidi, S. Venkatesh, K. Sengupta, “42-62 GHz Transformer-based Broadband mmWave InP PA with Second Harmonic Waveform Engineering and Enhanced Linearity”, IEEE Transactions on Microwave Theory and Techniques, 2020
S. Dhar, T. Sharma, N. Zhu, R. Darraji, D. G. Holmes, J. Staudinger, M. Helaoui, V. Mallette, and F. M. Ghannouchi, “Modeling of input nonlinearity and waveform engineered high efficiency class-F power amplifiers,” IEEE Transactions on Microwave Theory and Techniques, 2020.
C. Chappidi, T. Sharma and K. Sengupta, “Multi-port Active Load-pulling for mm-Wave 5G Power Amplifiers: Bandwidth, Back-off Efficiency and VSWR Tolerance,” in IEEE Transactions on Microwave Theory and Techniques,2020
S. Dhar, T. Sharma, N. Zhu, R. Darraji, R. McLaren, D. G. Holmes, V. Mallette, and F. M. Ghannouchi, “Input harmonic controlled broadband continuous class F power amplifiers for Sub 6 GHz 5G applications,” IEEE Transactions on Microwave Theory and Techniques
T. Sharma, J. Roberts, R. Darraji, D. G. Holmes, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “Simplified first-pass design of high-efficiency class-F−1 power amplifiers based on second-harmonic minima,” IEEE Transactions on Microwave Theory and Technique,2019
T. Sharma, E. R. Srinidhi, R. Darraji, D. G. Holmes, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “High-efficiency input and output harmonically engineered power amplifiers,” IEEE Transactions on Microwave Theory and Techniques,2018
T. Sharma, J. Roberts, R. Darraji, D. G. Holmes, J. K. Jones, and F. M. Ghannouchi, “Novel integrated class-F power amplifier design for RF power infrastructure applications,” IEEE Access, 2018
T. Sharma, P. Aflaki, M. Helaoui and F. M. Ghannouchi, “Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications,” in IEEE Access, 2018
T. Sharma, E. R. Srinidhi, D. G. Holmes, R. Darraji, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “On the double-inflection characteristic of the continuous-wave AM/AM in class F-1 power amplifiers,” IEEE Microwave Wireless and Components Letters, 2018
T. Sharma, D. G. Holmes, R. Darraji, E. R. Srinidhi, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “On the second-harmonic null in design space of power amplifiers,” IEEE Microwave Wireless and Components Letters, 2018
Patents
Three Way Combined RF Power Amplifier Architecture
Load Modulated Balanced Power Amplifier Integrated Circuits Including Transformer Based Hybrid Splitter/Combiner Circuits
Hybrid power amplifier circuit or system with combination low-pass and high-pass interstage circuitry and method of operating the same.
Gallium Nitride (GaN) power amplifier RF device with input output harmonic termination for power density enhancement
Conference and Seminars
T. Sharma, N.Zhu, J. Roberts and D.G. Holmes, “Novel Continuous Inverse Class F Power Amplifier for High Power 5G Macro Base Station”, in IEEE MTT- International Microwave Symposium (IMS),2021 [Best Industry Paper Award]
T. Sharma*, Z. Liu* and K. Sengupta, “80-110 GHz Broadband Linear PA with 33% peak PAE and Comparison of Stacked Common-Base and Common-Emitter PA in InP”, in IEEE MTT- International Microwave Symposium (IMS),2021 [Best Student Paper Award]
T. Sharma, Z. Liu, C. Chappidi and K. Sengupta “ Broadband PA Architectures with Asymmetrical Combining and Stacked PA cells across 50-70 GHz and 64-110 GHz in 250 nm InP”, IEEE MTT- International Microwave Symposium (IMS),2020S.R. Embar, T.Sharma et.al, “Digitally Assisted Load Modulated Balanced Amplifier for High Power Base Station Application”, in IEEE MTT- International Microwave Symposium (IMS), 2020 [Nominated Best Industry Paper Award]
S. Dhar, T. Sharma, R. Darraji, D. G. Holmes, J. Staudinger, X. Zhou, V. Malette, and F. M. Ghannouchi, “Impact of input nonlinearity on efficiency, power, and linearity performance of GaN RF power amplifiers,” in IEEE MTT- International Microwave Symposium (IMS), 2020 [Nominated Best Student Paper Award]
C. Chappidi,T. Sharma and K. Sengupta,” Load Modulated Balanced mm-Wave CMOS PA with Integrated Linearity Enhancement for 5G applications,” in IEEE MTT- International Microwave Symposium (IMS), 2020 [Best Student Paper Award]
H. Saiedi, S.Venkatesh, T.Sharma, C.Chappidi and K. Sengupta, “A 4×4 Distributed Multi-Layer Oscillator Network for Harmonic Injection and THz Beamforming with 14 dBm EIRP at 416 GHz in a Lensless 65nm CMOS IC”, in IEEE International Solid-State Circuits Conference (ISSCC) 2020
T. Sharma, R. Darraji, D. G. Holmes, J. Jones, and F. M. Ghannouchi, “On the efficiency and AM/AM flatness of inverse class-F power amplifiers,” in 2019 IEEE MTT-S International Microwave Symposium (IMS’2019), Boston, MA, USA, pp. 460–463, Jun. 2019.
T. Sharma, R. Darraji, S. Dhar, D. G. Holmes, J. Jones, and F. M. Ghannouchi, “Novel high efficiency power amplifier mode using open circuit harmonic loading,” in 2019 IEEE MTT-S International Microwave Symposium (IMS’2019), Boston, MA, USA, pp. 79–82, Jun. 2019.
S. Dhar, T. Sharma, D. G. Holmes, R. Darraji, J. Jones, and F. M. Ghannouchi, “Comprehensive analysis of input waveform shaping for efficiency enhancement in class-B power amplifiers,” in IEEE MTT-S International Microwave Symposium (IMS’2019), Boston, MA, USA, pp. 1164–1167, Jun. 2019.
T. Sharma, R. Embar, D. G. Holmes, R. Darraji, J. Jones, and F. M. Ghannouchi, “Input harmonic sensitivity in high-efficiency GaN power amplifiers,” in IEEE MTT-S International Microwave Symposium (IMS’2018), Philadelphia, PA, USA, pp. 461–464, Jun. 2018.
T. Sharma, R. Embar, D. G. Holmes, R. Darraji, J. Jones, and F. M. Ghannouchi, “Harmonically engineered and efficiency enhanced power amplifier design for P3dB/back-off applications,” in IEEE MTT-S International Microwave Symposium (IMS’2017), Honolulu, HI, USA, pp. 798–792, Jun. 2017.
