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Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

TitleAu-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
Publication TypeJournal Article
Year of Publication2020
AuthorsGuiney, I, Humphreys, CJ, Sen, P, Muralidharan, R, Nath, DN, ,
JournalJVSTB
Volume38
Pagination032207
DOI10.1116/1.5144509