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Research News

Nanorobots as mobile Nanotweezers

Controlled manipulation of nanoscale objects in fluidic media is one of the defining goals of modern nanotechnology. So far, plasmonic tweezers – nanosized tweezers made up of noble metals -- are used to trap such small sized cargo.

Breaking the Boltzmann limit for low power Nano-transistor

Power consumption in modern electronic devices is a major technological and environmental concern. This is because although technologists are able to reduce the dimensions of the transistor, they are unable to reduce the voltage required for its operation (called supply voltage).

Development of a novel vapor-annealing process to consistently and reliably get high-performance perovskite solar cells

Spin coated perovskite thin films are known to poor device-to-device repeatability, mostly due to poor control on morphology of the deposited films. In this work, a post-deposition vapor annealing process was developed, which “fixes” the issues with as-deposited films, leading to high-efficiency perovskite solar cells with excellent repeatability (standard deviation of only 0.7%).

Fate of an Intruder in Colloidal Nanocrystals is Governed by Entropy

Using a modified and highly configurable optical trap we have observed formation of 2D colloidal crystallites whose phase and sizes can be controlled. This system allows us to study the dynamics of foreign dopants injected into the crystallites. The striking result obtained here was the ability of finite-sized colloidal clusters to expel or internalize a foreign dopant depending on its initial position.

Reduced Graphene Oxide-Silver Nanocomposite Films For Temperature Sensor Application

The present invention relates to nanocomposite comprising reduced Graphene oxide and silver nanoparticles; a method of synthesis of nanocomposite and fabrication of nanocomposite film on a substrate for sensor applications based on the principle of negative temperature coefficient (NTC) of piezoresistive temperature sensing elements.

n-Si/Cu2O hole-selective heterojunction with a highly improved open-circuit voltage compared to state-of-the-art, by reducing the defect density at the Si/Cu2O interface by 1000 times

Silicon p-n homojunction technology dominates the commercial photovoltaics industry. Notwithstanding the great strides in reducing the cost, high-efficiency p-n junction cells still require high temperatures and ultraclean processes for doping and passivation, which limit throughput. One way to reduce cost further is to replace the p-n homojunction by carrier-selective contacts, such as Si/Cu2O heterojunction.

Reduced Graphene Oxide Nanomaterial Coated Cotton fabric as a heating device and method therefore

The invention relates to a heating device comprising a fabric integrated with reduced graphene oxide nanosheets films and method of fabrication thereof. The RGO coated cotton cloth based electro thermal film (figure 3(a)) showed a good heating performance. When 40V is applied, the saturated temperature were attained 52º C, 56º C and 62º C for 1 min, 5 min and 5 min under vacuum respectively. It has been observed that, the power drawn by the device at 40 V was 476 mW.

Novel wafer scale technique for exact placement of two arrays of Nanoparticles

A novel wafer scale technique for exact placement of two arrays of nanoparticles, with graphene as a spacer, has been developed. Placing two nanoparticles at such proximity gives rise to an extremely high field concentration in the gap between the two particles, which has enabled an extremely large near field enhancement, (E/EO) ~ 103. This has resulted in a huge photovoltage (in the order of A/W) and enhancement of the Raman signal (approx.

Simple and low-cost liquid phase epitaxy (LPE) technique to grow high quality epitaxial films of germanium on silicon (100)

Germanium has significantly high electron and hole mobility compared to silicon, which makes it a promising material for CMOS technology. Ge is used in photonics both as an absorber in near IR as well as a waveguide for mid-IR. Ge is also lattice matched to III-V semiconductors, so good quality III-V films can be grown on Ge substrates.

Reduced Graphene Oxide Nanosheets based strain sensor for pressure transducers and method therefore

The present invention is in relation to strain gauge based on reduced graphene oxide nanosheets embedded on to cellulose material and integrated on to a stainless steel diaphragm. The invention is also in relation to transducer comprising the aforementioned sensor and method of fabrication thereof. The developed sensors (figure 4(a)) shows the sensitivity of about 1.19 Ω/ bar.

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