| Title | Design, fabrication and characterization of capacitive RF MEMS switches with low pull-in voltage |
| Publication Type | Conference Paper |
| Year of Publication | 2014 |
| Authors | Shekhar, S, Vinoy, KJ, Ananthasuresh, GK |
| Conference Name | 2014 IEEE International Microwave and RF Conference (IMaRC) |
| Date Published | Dec |
| Keywords | capacitive RF MEMS switch, Capacitive switch, dielectric charging, Dielectrics, Fabrication, glass substrate, high actuation voltage, insertion loss, isolation, Loss measurement, low pull-in voltage MEMS switch, low-actuation voltage, mask surface micromachining process, micromachining, Micromechanical devices, microswitches, microwave switches, pull-in voltage, Radio frequency, RF MEMS, Semiconductor device measurement, voltage 4.8 V |
| Abstract | The dielectric charging caused by high actuation voltages is one of the reasons behind the poor reliability of capacitive MEMS switches. This paper reports the design, fabrication and characterization of an RF MEMS switch with a very low-actuation voltage and high isolation. The device is fabricated on a glass substrate using a four mask surface micromachining process. The electromechanical characterization reveals a very low pull-in voltage of 4.8 V for the fabricated device. The RF measurement results show an insertion loss of 0.55 dB and an isolation of -47.6 dB at 40 GHz. The excellent RF performance makes these switches a suitable choice for very high frequency (K-band and above) applications. |
| DOI | 10.1109/IMaRC.2014.7038983 |
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