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Effect of post plasma oxidation on Ge gate stacks interface formation

TitleEffect of post plasma oxidation on Ge gate stacks interface formation
Publication TypeJournal Article
Year of Publication2016
AuthorsMukhopadhyay, S, Mitra, S, Ding, YIMing, Ganapathi, KL, Misra, D, Bhat, N, Tapily, K, Clark, RD, Consiglio, S, Wajda, CS, ,
JournalECS Transactions

This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric depositionto processTiN/AlO/ZrO2/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics have been studied. Considerable degradation of electrical properties has been observed with SPAO being performed before AlO/ZrO2 gate stack deposition. When SPAO is performed in between AlO/ZrO2deposition, moderate increase in EOT and significant decrease in Dit was observed, which can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO is performed after the deposition of both the high-k layers, higher Ditwas observed suggesting that a thinner GeOX layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between AlO/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was demonstrated that improved dielectric and interface quality can be achieved when ALD-AlO/ZrO2 gate stacks were exposed to SPAO.