Enhancement mode high electron mobility transistor (hemt)

The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (Al_xTi_1-xO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with Al_xTi_1-xO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with Al_xTi_1-xO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current ˜400 mA/mm, sub-threshold slope of 73 mV/dec, R_on=8.9 Ωmm, interface trap density <10¹⁰ mm⁻²eV⁻¹ and gate leakage below 200 nA/mm at the OFF-state breakdown.