Sorry, you need to enable JavaScript to visit this website. | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Enhancement mode high electron mobility transistor (hemt)

TitleEnhancement mode high electron mobility transistor (hemt)
Publication TypeMiscellaneous
Year of Publication2019
AuthorsShrivastava, M, Gupta, SDutta, Soni, A, Raghavan, S, Bhat, N

The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (AlxTi1-xO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with AlxTi1-xO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with AlxTi1-xO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current ˜400 mA/mm, sub-threshold slope of 73 mV/dec, Ron=8.9 Ωmm, interface trap density <1010 mm−2eV−1 and gate leakage below 200 nA/mm at the OFF-state breakdown.