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Gallium-Doped Piezoresistive Sensor With Optimized Focused Ion Beam Implantation

TitleGallium-Doped Piezoresistive Sensor With Optimized Focused Ion Beam Implantation
Publication TypeJournal Article
Year of Publication2017
AuthorsSharma, A, Suma, BN, Bhat, KN, Naik, AK
JournalJournal of Microelectromechanical Systems
Volume26
Pagination127–134
Keywordsannealing, Doping, Gallium, Ions, Resistance, Resistors, silicon
Abstract

In this paper, we present the results of gallium implantation/doping in silicon using focused ion beam (FIB) to realize gallium (Ga) doped piezoresistive pressure sensor. We have performed optimization of various FIB parameters and demonstrated that with this approach, a gauge factors of about 100 and a sheet resistance of 1-2 kQ/square can be achieved using optimized FIB doses in range of 5×1017-8×1018 ion/m2. The results open a novel and simple way of fabricating piezoresistors especially on nanoscale structures where lithography can be challenging.

DOI10.1109/JMEMS.2016.2620801