| Title | Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | K Bhat, M, Mandal, S, Pathak, S, G Saravanan, S, Sridhar, C, Badnikar, SL, Vyas, HP, Muralidharan, R, Jain, MK, Subrahmanyam, A |
| Journal | Semicond. Sci. Technol |
| Volume | 27 |
