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High-performance HfO 2 back gated multilayer MoS 2 transistors

TitleHigh-performance HfO 2 back gated multilayer MoS 2 transistors
Publication TypeJournal Article
Year of Publication2016
AuthorsGanapathi, KLakshmi, Bhattacharjee, S, Mohan, S, Bhat, N
JournalIEEE Electron Device Letters
Keywordscontact resistance, Films, hafnium compounds, logic gates, Nonhomogeneous media, Substrates, Transistors

A new substrate (~30-nm HfO2/Si) is developed for high-performance back-gated molybdenum disulfide (MoS2) transistors. Record drain current Ids~180 μA/μm and transconductance value gm~75 μS/μm at Vds = 1V have been achieved for 1-μm channel length multilayer MoS2 transistors on HfO2/Si substrate. The transistors on HfO2 substrate show > 2.5× enhancement in field effect mobility (μFE~65 cm2/V·s) compared with the transistors on SiO2 (μFE~65 cm2/V·s) substrate. The intrinsic mobility extracted from Y function technique (μFE~154 cm2/V·s) is 3× more than SiO2substrate. The drastic improvement in transistor performance is attributed to a combination of three factors: 1) efficient gate coupling with an EOT of 6.2 nm; 2) charge impurity screening due to high-k dielectric; and 3) very low contact resistance through sulfur treatment.