Title | High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3 |
Publication Type | Journal Article |
Year of Publication | 2020 |
Authors | Mech, RK, Mohta, N, Chatterjee, A, Selvaraja, SKumar, Muralidharan, R, Nath, DN |
Journal | physica status solidi (a) |
Volume | 217 |
Pagination | 1900932 |
Keywords | highest responsivity indium selenide self-powered vertical metal–semiconductor–metal photodetectors |
Abstract | Herein, device demonstration based on vertical transport in multilayer α‐In2Se3 is reported. Photodetectors realized using a metal/α‐In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W−1 and a detectivity of >1013 cm Hz0.5 W−1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α‐In2Se3 junction resulted in a photovoltaic effect with VOC ≈0.1 V and ISC ≈0.4 μA under an illumination of 520 nm. |
URL | https://doi.org/10.1002/pssa.201900932 |