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An integrated X-band FMCW radar transceiver in 130-nm CMOS technology

TitleAn integrated X-band FMCW radar transceiver in 130-nm CMOS technology
Publication TypeConference Paper
Year of Publication2015
AuthorsChowdary, TA, Banerjee, G
Conference Name2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)
Date PublishedDec
KeywordsCMOS integrated circuit, CMOS integrated circuits, CMOS technology, CW radar, down-conversion mixer, FM radar, Frequency modulated continuous wave (FMCW) radar, Frequency modulation, integrated X-band FMCW radar transceiver, LNA, low noise amplifiers, low pass filter, low-noise amplifier, low-pass filters, LPF, Mixers, power 36 mW, power amplifier drivers, power amplifiers, Radar, Radio frequency, Receivers, size 130 nm, transceiver, transceivers, VCO buffer, voltage 1.2 V, voltage buffer, voltage controlled oscillator, voltage-controlled oscillators, X-band

A fully integrated low power X-band radar transceiver in 130 nm CMOS process is presented. The highly integrated sub-system includes a low-noise amplifier (LNA), a voltage buffer, a down-conversion mixer, a low pass filter (LPF), a voltage controlled oscillator (VCO), a VCO buffer and two power amplifier (PA) drivers. The receiver provides a voltage conversion gain of 10 dB. The output power of the transmitter including the PA is -2 dBm. The total DC power consumption of the transceiver is 36 mW from a 1.2 V supply and the size of the chip is 670 × 716 μm2.