Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET

A new method for the separation of contact resistance (R_contact) into Schottky barrier resistance (R_SB) and interlayer resistance (R_IL) is proposed for multilayered MoS₂ FETs. While R_SB varies exponentially with Schottky barrier height (Φ_bn), R_IL essentially remains unchanged. An empirical model utilizing this dependence of R_contact versus Φ_bn is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest R_contact, suggest that the extracted R_IL(1.53 kQ · μm) for an unaltered channel would determine the lower limit of intrinsic R_contact even for barrierless contacts for multilayered exfoliated MoS₂ FETs.