Sorry, you need to enable JavaScript to visit this website. | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Optical-Phonon-Limited High-Field Transport in Layered Materials

TitleOptical-Phonon-Limited High-Field Transport in Layered Materials
Publication TypeJournal Article
Year of Publication2016
AuthorsChandrasekar, H, Ganapathi, KLakshmi, Bhattacharjee, S, Bhat, N, Nath, DN
JournalIEEE Transactions on Electron Devices
KeywordsCharge carrier density, Electron optics, Optical materials, Optical saturation, Optical scattering, Optical switches, Transistors

An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured vsat is discussed and compared with the theoretically predicted dependence over a range of temperatures.