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Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots

TitleStructural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots
Publication TypeJournal Article
Year of PublicationSubmitted
AuthorsSrinivasan, T, Singh, SN, Tiwari, U, Sharma, RK, Muralidharan, R, Rao, DVSridhar, Balamuralikrishnan, R, Muraleedharan, K
JournalJournal of Crystal Growth
Volume280