2013.09~2017.08 Ph.D. from Division of Advanced Materials Engineering, Kongju National University, KOREA.
2009.06~2011.06 Master of Science (Physics) from Sri Venkateswara University, Tirupathi, India.
2005.06~2008.03 Bachelor of Science (Physics, Chemistry, Mathematics) from Sri Venkateshwara University Tirupathi, India.
Experience:
DST Inspire Faculty, 2021 Jan- till date
Research Fellow at School of Materials Science & Engineering, Nanyang Technological University, Singapore, 2019 Feb -2021 Jan.
Post-doctoral fellow at School of Electrical Engineering, Korea Advance Institute of Science and Technology, South Korea, 2018 April -2018 Sept.
Post- doctoral fellow at Department of Display and Semiconductor Physics, Korea University, South Korea, 2017 Aug- 2018 Feb.
Research Interests
Memristors for neuromorphic computing
Neuromorphic materials and devices
Printed electronics
Electronic Skin
Publications
S K Vishwanath, B Febriansyah, Sien Ng, R A John, M Jagadeeswararo, N Tiwari, Srilakshmi Subramanian Periyal, A Nirmal, N Mathews “One-Dimensional Halide Perovskites for Large-Area Flexible Cross-Bar Memristors and Neuromorphic Computing” (Under review: Nature Communications).
R A John, Nimesh Shah, S K Vishwanath, Sien Ng, B Febriansyah, C-H Chang. A Basu, N. Mathews “ Halide Perovskite Memristors as Flexible and Reconfigurable Physical Unclonable Functions” (Under review: Nature Communications) (Equally contributed).
RA John, N Tiwari, MIB Patdillah, MR Kulkarni, N Tiwari, J Basu, SK Bose, CJ Yu, A Nirmal, SK Vishwanath, C Bartolozzi, A Basu, N. Mathews “Self-healable neuromorphic memtransistor elements for decentralized sensory signal processing in robotics” Nat Commun 11, 4030 (2020).
M Jung, SK Vishwanath, J Kim, DK Ko, MJ Park, SC Lim, S Jeon “ Transparent and flexible Mayan-pyramid-based pressure Sensor using facile-transferred indium tin oxide for Bimodal Sensor Applications” Scientific reports 9 (1), 1-11 (2019) (Equally contributed).
SK Vishwanath, H. Woo, S.Jeon “Non-volatile resistive switching in CuBi-based conductive bridge random access memory device” Applied Physics Letters 112 (25),253503 (2018).
SK Vishwanath, H. Woo, S.Jeon “Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching” Nanotechnology29 (23), 235202. (2018).
H. Woo, SK Vishwanath, S.Jeon Excellent resistive switching performance in Cu-Se based atomic switch using lanthanide metal nanolayer at Cu-Se/Al2O3 interface. ACS
S.K. Vishwanath, T An, WY Jin, JW Kang, J Kim “The optoelectronic properties of tungsten-doped indium oxide thin films prepared by polymer-assisted solution processingfor use in organic solar cells” Journal of Materials Chemistry C 5 (39), 10295-10301 (2017).
S. K. Vishwanath and Jihoon Kim, “Resistive switching characteristics of all-solution based Ag/TiO2/Mo-doped In2O3 devices for non-volatile memory applications”Journal of Materials Chemistry C 4, 10967 (2016)
Conference and Seminars
"Resistive Switching Characteristics of All-Solution-Processed Ag/TiO2/Mo-Doped In2O3Nonvolatile Memory Device ". 2017 MRS Spring Meeting & Exhibit , Phoenix, Arizona, USA.
"Polymer assisted solution process of transparent conducting oxide for organic solar cells and Resistive random access memory devices". iumrs-icem2016 - Materials Research Society of Singapore (MRS-S), Singapore.
"High mobility and visible – near infrared transparent conducting Mo doped indium oxide electrode by Polymer assisted solution process". 2015 Fall EMRS, Warsaw, Poland.
"Polymer assisted solution process of transparent conducting oxide for organic solar cells". 2014 MRS Fall Meeting, Boston, USA.
