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Prabhakara Rao Y P

Publications

  • "75 MeV boron ion irradiation studies on Si PIN photodiodes," Nuclear Instruments and Methods in Physics Research Section B, vol. 316, pp. 205-209, 2013. Y.P. Prabhakara Rao, K. C. Praveen, Y. Rejeena Rani, Ambuj Tripathi, and A. P. Gnana Prakash
  • “Reliability studies on Si PIN photodiodes under Co-60 gamma radiation”, AIP Conference Proceedings, vol. 1512, pp. 1028-1029, 2013. Y. P. Prabhakara Rao, K. C. Praveen, Y. Rejeena Rani, A. P. Gnana Prakash
  • “The Effects of 60Co Gamma Irradiation on Si PIN Photodiode Coated with Silicon Nitride as Anti-Reflective Coating”, International Journal of Latest Technology in Engineering, Management & Applied Science (IJLTEMAS), vol. 3(7), pp. 50-55, 2014. Y. P. Prabhakara Rao, K. C. Praveen, Y. Rejeena Rani and A. P. Gnana Prakash,
  • “Novel methods to reduce leakage current in Si PIN photodiodes designed and fabricated with different dielectrics”, Indian Journal of Pure and Applied Physics, Vol.52, 2014. Y. P. Prabhakara Rao, K. C. Praveen, Y. Rejeena Rani, A. P. Gnana Prakash.
  • Silicon Pad Detectors for ALICE forward Calorimeter. DAE Symposium-2012,
  • S A khan1*, S R Narayan1, J Saini1, P. Bhaskar1, S Muhuri1, Y P Prabhakara Rao2, Y Rejeena Rani2, V B Chandratre3, S Mukhopadhyay3, and T.K.Nayak1
  • “75 MeV Boron ion irradiation studies on Si PIN Photodiodes”, International conference on Swift Heavy Ion Induced Materials Engineering and Characterization (SHIMEC 2012), Inter University Accelerator Centre (IUAC), New Delhi, October 9-12, 2012. Y. P. Prabhakara Rao, K. C. Praveen, Y. Rejeena Rani, Ambuj Tripathi, A. P. Gnana Prakash
  • “ Reliability studies on Si PIN photodiodes under Co-60 gamma radiation”, 57th DAE Solid State Physics Symposium, IIT, Mumbai, December 7, 2012. Y. P. Prabhakara Rao, K. C. Praveen, Y. Rejeena Rani, Ambuj Tripathi, A. P. Gnana Prakash
  • .First Test of High Resolution +Silicon Pad Detectors for the ALICE Forward Calorimeter.DAE Symposium-2011 S.R.Narayan1, J Saini1, S A Khan1, P. Bhaskar1, V B Chandratre2,S Mukhopadhyay2, Y P Prabhakara Rao3, Y.Rejeena Rani3 and T K Nayak1
  • Silicon Microstrip Sensors and Pad Detectors for Physics Experiments.In DAE-BRNS National Symposium on Nuclear Instrumentation-2010 (NSNI-2010, FEB 24-26th -2010) 1Anita Topkar , 1Bharti Aggarwal, 1Pourus Mehta, 1Arvind Singh, 1P K Mukhopadhyay, 2R K Choudhury, 3Y P Prabhakara Rao and 1G P Srivastava.
  • Comparison of different LET high energy ion irradiation effects on Si BJTs. Nuclear Instruments and Methods in Physics Research Section A.-2010 N. Pushpaa,a,* , K C Praveena, A.P.Gnana Prakasha, Y.P.Prabhakara Raob, Ambuj Tripatic, D Revannasiddaiaha.
  • A Comparison of MeV Li3+ ion, 100 MeV F8+ Ion and Co-60 gamma irradiation effect on N-Channel MOSFETs, Nuclear Instruments and Methods in Physics Research Section A. August 11-21,2010 N. Pushpaa,a,* , K C Praveena, A.P.Gnana Prakasha, Y.P.Prabhakara Raob, Ambuj Tripatic,G. Govinda Rajd, D Revannasiddaiaha
  • An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors. Nuclear Instruments and Methods in Physics Research Section A. August 11-21,2010 N. Pushpaa,a,* , K C Praveena, A.P.Gnana Prakasha, Y.P.Prabhakara Raob, Ambuj Tripatic, D Revannasiddaiaha
  • A Comparison of MeV Li3+ ion, 100 MeV F8+ Ion and Co-60 gamma irradiation effect on N-Channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section A. August 11-21,2010 N. Pushpaa,a,* , K C Praveena, A.P.Gnana Prakasha, Y.P.Prabhakara Raob, Ambuj Tripatic,G. Govinda Rajd, D Revannasiddaiaha
  • Design and Development of Avalanche Photo Diodes and Silicon Photo Multiplier. DAE-BRNS National Symposium on Nuclear Instrumentation-2010 (NSNI-2010) V B Chandratre1, V D Srivastava1, Sudheer K M1, C K Pithawa1, Y P Prabhakara Rao2 and Rejeena Rani Y2
  • Design and Development of Avalanche Photo Diodes and Silicon Photo Multiplier. DAE-BRNS National Symposium on Nuclear Instrumentation-2010 (NSNI-2010) V B Chandratre1, V D Srivastava1, Sudheer K M1, C K Pithawa1, Y P Prabhakara Rao2 and Rejeena Rani Y2
  • Design and Development of Multi Pixel Photon Counter Having Enhanced Response for Blue and UV Light. DAE-BRNS National Symposium on Nuclear Instrumentation-2010 (NSNI-2010 FEB 24-26th -2010) V B Chandratre1, V D Srivastava1, Sudheer K M1, C K Pithawa1, Y P Prabhakara Rao2 and Rejeena Rani Y2
  • An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors. Nuclear Instruments and Methods in Physics Research Section A. August 11-21,2010 N. Pushpaa,a,* , K C Praveena, A.P.Gnana Prakasha, Y.P.Prabhakara Raob, Ambuj Tripatic, D Revannasiddaiaha
  • Application of advanced 200Ghz Si-Ge HBTs for high dose radiation environments. Solid State Electronics 54 (2010) 1554-1560 K C Praveena, N Pushpa a, Y P Prabhakara Rao b, G Govindarajc, John D.Cresslerd, A P Gnana Prakasha*,a
  • The CMS preshower silicon sensors; Technology development and production in India. Published in Science Direct.: Nuclear Instruments and Methods in Physics Research Section A. 585 (2008) 121-127 Anitha Topkara,*, Bharathi Agarwal a, S Praveen Kumara, S K Katariaa, Y P Prabhakara Raob
  • Silicon Detector Technology Development in India for the participation in international experiments. Pramana – Journal of Physics Vol.69, No.6, December 2007, pp 1085-1088 Anita Topkar*,S PraveenKumar, Bharati Agarwal, S K Kataria and M D Ghodgaonkar.
  • Design and Fabrication of a monolithic constant fraction discriminator. National conference on Microelectronics & VLSI (IINC) 19-21 Dec 2005 at IIT-Bombay V D Srivastava1,4, P K Mukhopadhyay1, S K Kataria1, Y P Prabhakara Rao2, Rejeena Rani Y 2,and S Kal3.
  • Indigenous Technology Development for High Energy Resolution Silicon PIN Diode Detectors.Nuclear Physics Symposium at Banaras University DEC-2004 Anita Topkar +, Praveenkumar S+, Bharati Aggarwal+, Y P Prabhakara Rao+, N P Shankar Narayana+, Bency John+ and D C Biswas. 
  • Baseline Restorer ASIC and its Applications. DAE_BRNS National symposium on Nuclear Instrumentation 2004 17-20 Feb 2004 P K Muhopadhyay, Prafulla Satish, V D Shrivastava ,S Yadav, Y Rejeena Rani, Y P Prabhakara Rao.
  • Development of Silicon Radiation Detectors for Applications in high Radiation environment.XI International workshop on the Physics of Semiconductors department at IIT New Delhi 11.12.2001 to 15.12.2001 Vijay Mishra, Anita Topkar, S K Kataria*, Y P Prabhakara Rao and N P Shankar Narayana
  • Silicon Strip Detector Development under India –CMS Collaboration. Intelligent Nuclear Instrumentation (INIT)-2001 S K Kataria, M D Ghodgaonkar, Anita Topkar, M Y Dixit, V B Chandratre, A Das Vijay Mishra, V D srivastava and Bharati Aggarwal, A Subhash Chandran, H V Ananda, Y P Prabhakara Rao N P Shankar Narayana, O P Wadhawan, G S Virdi, Sathish Kumar, R N Soni, B C Pathak and N M Devashryee, R K Shivpuri, Aashutosh Bharadwaj and Kirti Ranjan, R K Chowdhari, Bency John and A K Mohanty, R V Shrikanthiah, G Y S G Acharyulu.