| Title | Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors |
| Publication Type | Journal Article |
| Year of Publication | 2019 |
| Authors | Bhattacharjee, S, Ganapathi, KLakshmi, Sharma, DGanesh, Sharma, A, Mohan, S, Bhat, N |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 18 |
| Pagination | 1071–1078 |
| Keywords | field effect transistors, hafnium compounds, logic gates, Molybdenum, Sulfur, Tunneling |
| Abstract | We demonstrate a rendition of an `ideal' low power transistor, by combining the advantages of a tunnel FET (steep subthreshold slope (SS <; 60 mV/dec)) with that of a thermionic FET (high ON current) in the same device. A dual-gated multilayer MoS 2 FET is fabricated keeping in view independent gate control and careful deliberation of device architecture and materials processing. This device is capable of operating in two distinct regimes (i) A low power tunnelling regime with steep SS and operational voltages <; 0.5 V OR (ii) A high mobility and I on , thermionic regime. Second, an intuitive modification in the device structure can dynamically tune the threshold voltage (V th ) and transport from OFF (tunnelling) to ON (thermionic) state, yielding the dual benefits of tunnelling and thermionic transport in the same operational cycle. The devices demonstrate hysteresis-free, steep SS (SS min 3.4 mV/dec and SS avg 29.3 mV/dec for 3 dec) and high mobility/Ion (100 cm 2 V -1 s -1 /0.16 μA μm -1 ) at an ultra-scaled Vds of 10 mV. To gather further insight into the transport mechanism of these devices, temperature dependent analysis of SS and Ion is presented, and explained using a simple semi-classical model. |
| DOI | 10.1109/TNANO.2019.2946449 |
