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Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal oxide semiconductor field-effect transistors

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TitleAnalytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal oxide semiconductor field-effect transistors
Publication TypeJournal Article
Year of Publication2003
AuthorsMaitra, K, Bhat, N
JournalJournal of Applied Physics
Volume93
Pagination1064–1068
Date Publishedjan
Research Area: 
Electronics