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Integrated temperature sensor for reconfigurable radio frequency synthesizer

TitleIntegrated temperature sensor for reconfigurable radio frequency synthesizer
Publication TypeConference Paper
Year of Publication2015
AuthorsGaggatur, JS, Banerjee, G
Conference NameElectronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on
Date PublishedJuly
KeywordsATS, calibration, CMOS analogue integrated circuits, CMOS process, current controlled ring oscillator (CCRO), Frequency conversion, frequency measurement, frequency synthesizers, frequency to voltage conversion, integrated analog temperature sensor, integrated circuit reliability, low-cost one-point calibration, One-point calibration, Oscillators, performance degradation reduction, Phase frequency detector, power 756 muW, radio frequency integrated circuit (RFIC), radiofrequency integrated circuits, reconfigurable radio, reconfigurable radio frequency synthesizer, RF integrated circuit reliability, size 0.13 mum, temperature 20 degC to 120 degC, temperature measurement, temperature sensor, Temperature sensors, temperature to frequency conversion, temperature to voltage conversion, temperature variation, temperature variations, thermal gradient, thermal management, Thermal sensor, voltage 1.2 V

Temperature variations significantly affect the performance and reliability of RF integrated circuits, which necessitates for thermal management in RF circuits. In this paper, an integrated analog temperature sensor (ATS) which operates with simple, low-cost one-point calibration is proposed. The temperature to voltage conversion is achieved in two steps i.e. temperature to frequency, followed by frequency to voltage conversion. The output voltage can be used to compensate the temperature dependent errors in the high frequency circuits, thereby reducing the performance degradation due to thermal gradient. The proposed ATS exhibits high sensitivity of 1.182 MHz/°C to temperature in the range of -20°C to 120°C. The errors due to supply and process variations after one-point calibration are within ±0.015°C. The integrated sensor was implemented in the 0.13μm CMOS process. It occupies a core area of 0.0076 mm2 while consuming 756 μW from a 1.2 V supply.