Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors

TitleInterface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors
Publication TypeJournal Article
Year of Publication1992
AuthorsBhat, N, Vasi, J
JournalIEEE Transactions on Nuclear Science
Pagination2230
Research Area: