| Title | Methods for attaining high interband tunneling current in III-Nitrides |
| Publication Type | Conference Paper |
| Year of Publication | 2012 |
| Authors | Growden, TA, Krishnamoorthy, S, Nath, DN, Ramesh, A, Rajan, S, Berger, PR |
| Conference Name | Device Research Conference (DRC), 2012 70th Annual |
| Date Published | June |
| Keywords | AlGaN, aluminium compounds, confmement barriers, forward interband tunneling current density, gallium compounds, high interband tunneling current, hysteresis effects, III-V semiconductors, indium, traps, tunnel diodes, tunnelling, wide band gap semiconductors |
| Abstract | In conclusion, the authors have reported an increase in forward interband tunneling current density from 17.7 A/cm2 [2] to 39.8 kA/cm2 by applying outside AIGaN confmement barriers and 6-doping to a common structure. Some of the devices still exhibit hysteresis effects caused by traps, but some seem to display less of an effect, which needs to be studied further to provide stability. Optimization of the barrier thickness and Indium composition must also be performed to continue to push the peak current density up in value |
| DOI | 10.1109/DRC.2012.6257036 |
