| Title | Optimization of oxygen flow rate for e-beam evaporated HfO2 thin films |
| Publication Type | Conference Paper |
| Year of Publication | 2012 |
| Authors | Ganapathi, KL, Bhat, N, Mohan, S |
| Conference Name | Emerging Electronics (ICEE), 2012 International Conference on |
| Date Published | Dec |
| Keywords | Adaptive optics, annealing, chemical properties, dielectric constant, E-beam evaporated thin films, e-beam evaporation, electrical properties, electron beam deposition, EOT, forming gas ambient, HfO2, high-k dielectric thin films, leakage current density etc, leakage currents, logic gates, Mechanical factors, metallisation, O2 flow rate, Optical films, oxygen flow rate optimization, permittivity, post deposition annealing, post metallization annealing, silicon substrates, size 32 nm to 40 nm, Temperature, vacuum deposition, XPS |
| Abstract | In this study, we have employed e-beam evaporation technique to evaluate the effect of O2 flow rate during evaporation on HfO2 films grown on Silicon substrates. We report the influence of oxygen flow rate on 32-40nm HfO2 films, by characterizing the chemical and electrical properties. It has been demonstrated that the films deposited at 3 SCCM O2 flow rate show better compositional and electrical properties. The effect of post deposition annealing (PDA) and post metallization annealing (PMA) in forming gas ambient (FGA) has been analyzed on the electrical properties of the films. After annealing the leakage decreases drastically, with a slight deterioration in dielectric constant. O2 flow rate of 3 to 5 SCCM has been found to be the optimum condition. |
| DOI | 10.1109/ICEmElec.2012.6636257 |
