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Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs

TitlePolyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs
Publication TypeJournal Article
Year of Publication2003
AuthorsMaitra, K, Bhat, N
JournalSolid-State Electronics
Volume47
Pagination15–17
Date Publishedjan
Research Area: