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SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell

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TitleSEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell
Publication TypeJournal Article
Year of Publication2003
AuthorsSaxena, PK, Bhat, N
JournalIEEE Transactions on Device and Material Reliability
Pagination14–17
Date Publishedmar
Research Area: 
Electronics