Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Publications

Found 36 results
Author Title [ Type(Desc)] Year
Filters: First Letter Of Title is O  [Clear All Filters]
Journal Article
H. Chandrasekar, Ganapathi, K. L. , Bhattacharjee, S. , Bhat, N. , and Nath, D. N. , “Optical-Phonon-Limited High-Field Transport in Layered Materials”, IEEE Transactions on Electron Devices, vol. 63, pp. 767-772, 2016.
R. Srinivasan and Bhat, N. , “Optimisation of Gate-Drain/Source Overlap in 90 nm NMOSFETs for Low Noise Amplifier Performance”, J. Low Power Electronics, ASP, vol. 4, pp. 240–246, 2008.
K. Lakshmi Ganapathi, Bhat, N. , and Mohan, S. , “Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors”, Journal of Physics D: Applied Physics, vol. 54, p. 445302, 2021.
N. Basu, Sterin, N. S. , Mamidala, S. Ram, Shenoy, A. , and Bhat, N. , “Optimization of Platinum dioxide properties by plasma oxidation of sputtered PtOx”, Materialia, vol. 8, p. 100477, 2019.
S. Basavaraja Rudraswamy and Bhat, N. , “Optimization of RF Sputtered Ag-Doped BaTiO 3-CuO Mixed Oxide Thin Film as Carbon Dioxide Sensor for Environmental Pollution Monitoring Application”, IEEE Sensors Journal, vol. 16, pp. 5145–5151, 2016.
P. Prakash, Abdulla, A. Z. , Singh, V. , and Varma, M. , “Optimizing the cargo-carrying capacity of single bacteria”, arXiv preprint arXiv:1901.01224, 2019.
N. Remesh, Mohan, N. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 67, pp. 2311–2317, 2020.
S. Krishnamurthy, Pandey, P. , Kaur, J. , Chakraborty, S. , Nayak, P. , Sadhanala, A. , and Ogale, S. B. , “Organic-Inorganic Hybrid and Inorganic Halide Perovskites: Structural and Chemical Engineering, Interfaces and Optoelectronic Properties”, Journal of Physics D: Applied Physics, 2020.
R. Raman, Mishra, P. , Kapoor, A. Kumar, and Muralidharan, R. , ““Origin of Berreman effect in GaN layers on sapphire substrates””, Journal of Applied Physics, vol. 110, p. 053519, 2011.
J. K. Kaushik, V. Balakrishnan, R. , Panwar, B. Singh, and Muralidharan, R. , “On the Origin of Kink Effect in Current–Voltage Characteristics of {AlGaN}/GaN High Electron Mobility Transistors”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 60, 2013.
G. Kanyal, Kumar, P. , Paul, S. K. , and Kumar, A. , “OTA based high frequency tunable resistorless grounded and floating memristor emulators”, AEU-International Journal of Electronics and Communications, vol. 92, pp. 124–145, 2018.

Pages