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Optical-Phonon-Limited High-Field Transport in Layered Materials

TitleOptical-Phonon-Limited High-Field Transport in Layered Materials
Publication TypeJournal Article
Year of Publication2016
AuthorsChandrasekar, H, Ganapathi, KL, Bhattacharjee, S, Bhat, N, Nath, DN
JournalIEEE Transactions on Electron Devices
Date PublishedFeb
Keywords2-D materials, black phosphorus, black phosphorus (BP), BN, boron compounds, boron nitride, carrier density, carrier density function, Charge carrier density, drain currents, Electron optics, electron velocity, field effect transistors, high-field transport, high-power high-frequency transistors, intrinsic cutoff frequency, layered 2D materials, low-power electronics, low-power logic switches, molybdenum compounds, MoS2, n-channel silicon, Optical materials, optical phonons, Optical saturation, Optical scattering, Optical switches, optical-phonon-limited carrier velocity model, optical-phonon-limited high-field transport, source-injection dominated regime, switches, temperature dependence, Transistors, transition metal dichalcogenides, transition metal dichalcogenides (TMDs), transition metal dichalcogenides (TMDs).

An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured vsat is discussed and compared with the theoretically predicted dependence over a range of temperatures.