Can One Material Detect Two Gases at Once—Without Power?

A collaborative research between CeNSE, IISc, IIT Kharagpur and IISER Trivandrum has resulted in a new study that explores MoO₂–MoSe₂ heterostructures created in a single-step CVD process for self-powered gas sensing at room temperature.

Key Highlights:

• S1 (MoO₂-rich) selectively detects H₂
• S2 (MoO₂–MoSe₂ heterostructure) shows high NO₂ sensitivity down to 10 ppm, enhanced by visible light and humidity
• No external power required
• Two flake types = complementary sensing
• Potential: Wearables, aerospace, and smart sensing arrays

Read More: Small 2025, 2503284. https://onlinelibrary.wiley.com/doi/10.1002/smll.202503284

Lear more about the Research work conducted by Prof. Navakanata Bhat’s work here: https://www.cense.iisc.ac.in/navakanta-bhat/

New insights into graphene–liquid interactions!

A recent study explores how suspended graphene membranes behave at the polar liquid–air interface within a microfluidic platform.

Using dynamic atomic force microscopy, researchers uncovered how graphene:

 — Eliminates capillary instabilities at the liquid interface

 — Enables stable, high-resolution phase imaging of defects like micro/nanoholes

— Seals the channel even with imperfections, thanks to trapped nanoconfined water

 — Creates a powerful platform for biosensing and nanomechanical applications

This work strengthens the foundation for graphene-integrated microfluidic devices and offers new avenues for studying confined water physics.

🔗 Read the full publication at: J. Appl. Phys. 137, 215302 (2025): https://doi.org/10.1063/5.0268038

Read about the research work from Prof. Akshay Naik’s group: https://www.cense.iisc.ac.in/akshay-naik/

A collaborative effort between CeNSE, IISc, and IIT Kanpur results in the development of lead-free Cs₃Bi₂I₉ perovskite memristors that mimic brain-like synapses—bringing us closer to next-gen, low-power neuromorphic computing.

This work marks a key advancement in lead-free, low-dimensional halide perovskites for neuromorphic hardware. It addresses critical issues like variability, nonlinearity, and sneak-path currents in memristor arrays, enabling reliable, high-yield performance. The materials are environmentally safe and suitable for scalable, flexible AI edge devices. With stable switching and uniformity, this research supports energy-efficient, real-time processing, paving the way for practical, neuromorphic systems in wearable electronics and edge-based AI applications.

Read more: ACS Energy Letters 2025 10 (5), 2193-2202, https://pubs.acs.org/doi/10.1021/acsenergylett.5c00411

Read more about the research work from Dr. Aditya Sadhanala’s group here: https://www.cense.iisc.ac.in/aditya-sadhanala/

Successful demonstration of the microwave power performance of AlGaN/GaN HEMTs on silicon at X-band frequencies. Notably, this achievement was realized using a polarization-graded buffer without any compensation doping, such as iron or carbon, in the stack. At the 2 dB compression point, the devices delivered 8 W of output power at 10 GHz with a drain efficiency of 46%. Further improvements are anticipated with substrate thinning and enhanced thermal management.

Cascaded Raman fiber lasers (CRFLs) can produce light at various wavelengths in the near-infrared (NIR) region, but their output is usually spectrally broad. In this work, researchers have introduced a new feedback method using Fourier spectral shaper that provides tunable filtered feedback, which helps narrow the output spectrum by about three times. This improvement is achieved without affecting the laser’s ability to tune across different wavelengths, while still delivering high power in the multi-watt range.

Here, we have introduced a method for remotely detecting the optical nonlinearities seen by ultrashort pulses in the fiber link. By integrating a custom-fabricated fixed delay interferometer with a quartz plate with partially reflecting Bragg mirrors to the detector module, we can accurately capture nonlinear distortions in sub-400 fs pulses. The detector module uses simple optics with non-movable parts and minimal footage, easily replicable at multiple target locations to facilitate pulse measurements. Thus, with robust delivery and characterization of both dispersive and nonlinear effects, this approach can significantly increase the efficacy of ultrafast laser sources and reduce overheads.

Researchers from the NEMS@CeNSE laboratory have created a highly sensitive graphene-based pressure sensor. It works by measuring changes in resonance frequency when pressure deforms a thin silicon diaphragm. This sensor is much more responsive than traditional silicon sensors, with a record-high performance of 20 kHz/kPa and potential up to 500 kHz/kPa. It can detect very small pressure changes (as low as 90 Pa). The design is simple, adaptable, and could be integrated into modern semiconductor manufacturing, making it highly practical. Read the complete article here at: More, S., & Naik, A. (2024). Graphene resonant pressure sensor with ultrahigh responsivity-range product. Journal of Micromechanics and Microengineering, 34(7), 075006.

This research presents a new method using synchronized optical and electrical measurements to better analyze and improve piezo-MEMS devices. Piezoelectric microelectromechanical systems (MEMS) have great market potential due to their efficient energy conversion. However, energy loss in piezoelectric films can reduce device performance. Current methods to measure energy loss are not ideal for thin-film devices where energy storage and dissipation are spread across layers. The method is demonstrated using specialized MEMS components, enhancing accuracy and performance insights. Read the complete article here: Kumar, V., Tiwari, S., Pillai, G., Pratap, R., & Chandorkar, S. A. (2024). Synchronized Opto-Electro-Mechanical Measurements for Estimation of Energy Dissipation in Thin-Film-Piezoelectric-on-Substrate MEMS/NEMS Devices. Journal of Microelectromechanical Systems.

In this work, researchers developed an architecture that uses silicon-loaded PZT as the waveguide to realize a modulator to help overcome the electro-optic interaction issue faced in conventional architecture. The device enhanced EO response by 400% is attributed to the improved electro-optic overlap as well as PZT film quality.

The article was published in Applied physics Letters, AIP Publishing, 124, 231105, (2204).

Researchers from CeNSE and SSCU, IISc demonstrated that VO2 based neuristors, produced electro-mechanical self-oscillatory behavior akin to biological neurons. High piezoelectric and electrooptic coefficients make it a promising candidate for diverse applications necessitating efficient energy conversion and optical modulation.

The research was published in AIP Publishing, Appl. Phys. Rev. 11, 021410 (2024).

The all-or-nothing law ensures the nerve cell fires at full strength or doesn’t. Members of the microsystems & fluctuations dissipation lab have demonstrated neuron like self-oscillations in thin films of NdNiO3.

Researchers from the Heterojunction lab have systematically investigated the controlled growth of Cu2O using CVD and demonstrated record values of hole mobility and field-effect mobility. These CVD-deposited films are repeatable, scalable and relevant for transistors, displays drivers, and sensors.

GaN HEMTs are crucial for high-power Radio Frequency (RF) applications like next-generation wireless communication and radars. Researchers from the Semiconductor Devices Lab have fabricated transistors on such a polarization-engineered platform displaying excellent dynamic performance, approaching state-of-the-art for GaN HEMTs on Silicon.