Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Band gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures

TitleBand gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures
Publication TypeJournal Article
Year of Publication2015
AuthorsGoyal, A, Kapoor, AK, Raman, R, Dalal, S, Mohan, P, Muralidharan, R
JournalJ. Appl. Phys.
Volume117
Pagination225702
Research Area: 
Electronics
GaN technology