| Title | Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors |
| Publication Type | Journal Article |
| Year of Publication | 2015 |
| Authors | Yang, Z, Nath, DN, Zhang, Y, Khurgin, JB, Rajan, S |
| Journal | IEEE Electron Device Letters |
| Volume | 36 |
| Pagination | 436-438 |
| Date Published | May |
| ISSN | 0741-3106 |
| Keywords | Aluminum gallium nitride, Ballistic transport, common emitter current, Doping, Gallium nitride, HF amplifiers, high-frequency amplifiers, Hot electron transistor, hot electron transistors, III-Nitride, III-nitride tunneling hot electron transistors, intrinsic voltage gain, N-polar tunneling hot electron transistor, Phonons, Resistance, signal current gain, Transistors, Tunneling, voltage 7 V |
| Abstract | Common-emitter operation was demonstrated in an N-polar tunneling hot electron transistor. Under collector-emitter bias of 7 V, small signal current gain 1.3, and voltage gain 4 were simultaneously obtained for transistors with 27.5-nm base. This is the first report of a III-nitride hot electron transistor with small signal current gain and intrinsic voltage gain both greater than unity. The result shows such III-nitride vertical transistors are promising for the next generation of high-frequency amplifiers. |
| DOI | 10.1109/LED.2015.2413934 |
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