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Demonstration of 2D/3D p-MoS2/n-SiC junction

TitleDemonstration of 2D/3D p-MoS2/n-SiC junction
Publication TypeConference Paper
Year of Publication2014
AuthorsLee, EW, Ma, L, Nath, DN, Lee, CH, Wu, Y, Rajan, S
Conference Name72nd Device Research Conference
Date PublishedJune
Keywords2D-3D p-MoS2-n-SiC junction, anisotype p-n junction, bipolar devices, Capacitance-voltage characteristics, crystalline p-MoS2 epitaxial growth, Epitaxial growth, Films, Junctions, molybdenum compounds, MoS2-SiC, novel device topologies, ohmic contacts, p-doping, p-n heterojunctions, p-type 2D-n-type 3D heterostructures, rectification, Semiconductor device measurement, semiconductor epitaxial layers, Silicon carbide, silicon compounds, Substrates, WBG semiconductors, wide band gap semiconductors, wide bandgap semiconductors
Abstract

In this work, we demonstrate 2D/3D heterojunction using large-area crystalline p-MoS2 epitaxially grown on n-doped 4H-SiC. The diode exhibited excellent rectification with an ideality factor of 1.5, as well as C-V characteristics typical of an anisotype p-n junction. Besides being promising for enabling novel device topologies, this realization of a p-type 2D/n-type 3D heterostructure holds potential for circumventing challenges associated with p-doping in wide bandgap (WBG) semiconductors which has otherwise held back the successful development of bipolar devices in WBG systems.

DOI10.1109/DRC.2014.6872306