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Determination of trap energy levels in AlGaN/GaN HEMT

TitleDetermination of trap energy levels in AlGaN/GaN HEMT
Publication TypeConference Paper
Year of Publication2013
AuthorsYang, J, Cui, S, Ma, TP, Hung, TH, Nath, DN, Krishnamoorthy, S, Rajan, S
Conference NameDevice Research Conference (DRC), 2013 71st Annual
Date PublishedJune
Keywords2DEG, AlGaN-GaN, aluminium compounds, Aluminum gallium nitride, barrier layer, conduction band edge, conduction bands, deep level transient spectroscopy, deep level traps, deep levels, device performance, electrically active traps, Electron traps, energy states, Frenkel-Poole trap energy extraction method, gallium compounds, Gallium nitride, HEMT, HEMTs, high electron mobility transistors, IETS, III-V semiconductors, inelastic electron tunneling spectroscopy, logic gates, MODFETs, photoionization spectroscopy, trap energy levels, trapped charges, tunnelling spectroscopy, two dimensional electron gas, two-dimensional electron gas, wide band gap semiconductors

The density of two dimensional electron gas (2DEG) in the channel of AlGaN/GaN HEMT is often altered by trapped charges on the surface or in the bulk of the heterostructure, limiting the device performance at high frequencies. The existing methods, such as photoionization spectroscopy, Deep Level Transient Spectroscopy (DLTS) etc., mainly focus on deep level traps in GaN, providing little information about traps in the AlGaN layer. In this work, we use Inelastic Electron Tunneling Spectroscopy (IETS), in conjunction with the Frenkel-Poole (F-P) trap energy extraction method developed by Yeh at el, to examine electrically active traps in the AlGaN barrier layer. The results indicate that traps exist in the AlGaN bulk, as well as at the AlGaN/GaN interface. The trap energy levels are within a 0.5eV band below the conduction band edge (Ec) of AlGaN in the sample that we studied.