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Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

TitleInterface Charge Engineering for Enhancement-Mode GaN MISHEMTs
Publication TypeJournal Article
Year of Publication2014
AuthorsHung, TH, Park, PS, Krishnamoorthy, S, Nath, DN, Rajan, S
JournalIEEE Electron Device Letters
Date PublishedMarch
KeywordsALD, AlGaN/GaN HEMT, Aluminum gallium nitride, Aluminum oxide, Capacitance-voltage characteristics, dielectric-AlGaN positive interface fixed charges, E-mode, electron mobility, electron mobility characteristics, enhancement-mode GaN MISHEMT, gallium compounds, Gallium nitride, high electron mobility transistors, III-V semiconductor materials, III-V semiconductors, impurity scattering, interface charge engineering, interface fixed charges, MIS devices, MISHEMT, normally-off, oxide-semiconductor interface charge density, oxygen plasma, Plasmas, positive threshold voltage, post-metallization anneal (PMA), post-metallization annealing, remote impurity scattering, Scattering, wide band gap semiconductors

We demonstrate an efficient approach to engineer the dielectric/AlGaN positive interface fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of interface fixed charges from 2 × 1013 to 8 × 1012 cm-2 was observed. Experimental and theoretical electron mobility characteristics and the impact of remote impurity scattering were investigated. The reduction in oxide/semiconductor interface charge density leads to an increase of electron mobility, and enables a positive threshold voltage.

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