| Title | Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | Hung, TH, Park, PS, Krishnamoorthy, S, Nath, DN, Rajan, S |
| Journal | IEEE Electron Device Letters |
| Volume | 35 |
| Pagination | 312-314 |
| Date Published | March |
| ISSN | 0741-3106 |
| Keywords | ALD, AlGaN/GaN HEMT, Aluminum gallium nitride, Aluminum oxide, Capacitance-voltage characteristics, dielectric-AlGaN positive interface fixed charges, E-mode, electron mobility, electron mobility characteristics, enhancement-mode GaN MISHEMT, gallium compounds, Gallium nitride, high electron mobility transistors, III-V semiconductor materials, III-V semiconductors, impurity scattering, interface charge engineering, interface fixed charges, MIS devices, MISHEMT, normally-off, oxide-semiconductor interface charge density, oxygen plasma, Plasmas, positive threshold voltage, post-metallization anneal (PMA), post-metallization annealing, remote impurity scattering, Scattering, wide band gap semiconductors |
| Abstract | We demonstrate an efficient approach to engineer the dielectric/AlGaN positive interface fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of interface fixed charges from 2 × 1013 to 8 × 1012 cm-2 was observed. Experimental and theoretical electron mobility characteristics and the impact of remote impurity scattering were investigated. The reduction in oxide/semiconductor interface charge density leads to an increase of electron mobility, and enables a positive threshold voltage. |
| DOI | 10.1109/LED.2013.2296659 |
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