| Title | Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET |
| Publication Type | Journal Article |
| Year of Publication | 2016 |
| Authors | Bhattacharjee, S, Ganapathi, KL, Nath, DN, Bhat, N |
| Journal | IEEE Electron Device Letters |
| Volume | 37 |
| Pagination | 119-122 |
| Date Published | Jan |
| ISSN | 0741-3106 |
| Keywords | barrierless contacts, contact resistance, contact resistance separation, Doping, field effect transistors, interlayer resistance, intrinsic limit, Metals, molybdenum compounds, MoS2, Multilayer MoS2 FET, multilayered exfoliated FET, Object recognition, Resistance, Schottky barrier height, Schottky barrier resistance, Schottky barriers, Tunneling, unaltered channel |
| Abstract | A new method for the separation of contact resistance (Rcontact) into Schottky barrier resistance (RSB) and interlayer resistance (RIL) is proposed for multilayered MoS2 FETs. While RSB varies exponentially with Schottky barrier height (Φbn), RIL essentially remains unchanged. An empirical model utilizing this dependence of Rcontact versus Φbn is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest Rcontact, suggest that the extracted RIL(1.53 kQ · μm) for an unaltered channel would determine the lower limit of intrinsic Rcontact even for barrierless contacts for multilayered exfoliated MoS2 FETs. |
| DOI | 10.1109/LED.2015.2501323 |
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