| Title | Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Park, PS, Nath, DN, Rajan, S |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Pagination | 991-993 |
| Date Published | July |
| ISSN | 0741-3106 |
| Keywords | 1D self-consistent Schrodinger-Poisson solver, AlGaN/GaN high-electron-mobility transistor (HEMT), aluminium compounds, Aluminum gallium nitride, capacitance–voltage ($C$–$V$ ), electron wavefunction, gallium compounds, Gallium nitride, GaN-AlGaN-GaN, HEMT, HEMTs, high electron mobility transistors, III-V semiconductors, inverted high-electron-mobility-transistor structure, logic gates, measured C-V profile, multiple-subband occupancy, N-polar GaN, N-polar heterostructures, negative quantum, negative quantum displacement effects, Poisson equation, Quantum capacitance, quantum capacitance effects, quantum displacement, Schrodinger equation, Thickness measurement, wide band gap semiconductors |
| Abstract | We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction Δd. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement Δd of -4nm was extracted from the measurements. Further analysis using 1-D self-consistent Schrodinger-Poisson solver has been done to validate the measured data. Our simulation results, including multiple-subband occupancy, explain the increasing capacitance in the measured C-V profile in N-polar GaN-based HEMTs. |
| DOI | 10.1109/LED.2012.2196973 |
