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Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

TitleQuantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
Publication TypeJournal Article
Year of Publication2012
AuthorsPark, PS, Nath, DN, Rajan, S
JournalIEEE Electron Device Letters
Date PublishedJuly
Keywords1D self-consistent Schrodinger-Poisson solver, AlGaN/GaN high-electron-mobility transistor (HEMT), aluminium compounds, Aluminum gallium nitride, capacitance–voltage ($C$–$V$ ), electron wavefunction, gallium compounds, Gallium nitride, GaN-AlGaN-GaN, HEMT, HEMTs, high electron mobility transistors, III-V semiconductors, inverted high-electron-mobility-transistor structure, logic gates, measured C-V profile, multiple-subband occupancy, N-polar GaN, N-polar heterostructures, negative quantum, negative quantum displacement effects, Poisson equation, Quantum capacitance, quantum capacitance effects, quantum displacement, Schrodinger equation, Thickness measurement, wide band gap semiconductors

We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction Δd. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement Δd of   -4nm was extracted from the measurements. Further analysis using 1-D self-consistent Schrodinger-Poisson solver has been done to validate the measured data. Our simulation results, including multiple-subband occupancy, explain the increasing capacitance in the measured C-V profile in N-polar GaN-based HEMTs.