Title | Study of TaN-gated p-GaN E-mode HEMT |
Publication Type | Journal Article |
Year of Publication | 2023 |
Authors | Baby, R, Reshma, K, Chandrasekar, H, Muralidharan, R, Raghavan, S, Nath, DN |
Journal | IEEE Transactions on Electron Devices |
Volume | 70 |
Pagination | 1607–1612 |
Keywords | Aluminum gallium nitride, gate leakage, HEMTs, logic gates, Metals, Threshold voltage, wide band gap semiconductors |
Abstract | We report on the study of tantalum nitride (TaN) gate-stack on p-GaN-based e-mode high electron mobility transistor (HEMT) on silicon. Besides offering an excellent etch selectivity of >1:30 over p-GaN under Cl2/O2/Ar-based dry etch, which is promising for self-aligned gate etch process, TaN-gated HEMTs exhibited three orders of lower forward gate leakage than reference devices with Ti/Au gate-stack. At 150 °C, the forward gate leakage was still found to be about |
DOI | 10.1109/TED.2023.3241132 |