Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Publications

Found 32 results
Author Title [ Type(Asc)] Year
Filters: First Letter Of Last Name is Y  [Clear All Filters]
Journal Article
B. Sethumadhavan, Yao, W. , Eguchi, H. , Ghosh, A. , Huang, Y. H. , Kim, Y. H. , Lanou, R. E. , Maris, H. J. , Mocharnuk-Macchia, A. N. , and Seidel, G. M. , “Charge Transport in Liquid Helium at Low Temperatures”, AIP Conf. Proc., vol. 850, 2006.
N. Yadav, Sen, P. , and Ghosh, A. , “Bubbles in superfluid helium containing six and eight electrons: Soft, quantum nanomaterial”, Science Advances, vol. 7, p. eabi7128, 2021.
X. Yuan, Garg, S. , De Haan, K. , Fellouse, F. A. , Gopalsamy, A. , Tykvart, J. , Sidhu, S. S. , Varma, M. M. , Pal, P. , Hillan, E. M. , and , , “Bead-based multiplex detection of dengue biomarkers in a portable imaging device”, Biomedical Optics Express, vol. 11, pp. 6154–6167, 2020.
Conference Paper
S. Hebbar, V, K. , K, K. G. , Kumar, A. , Kumari, A. S. Ashwini, Yasasvi, R. , Gupta, A. K. , Mishra, V. , Amrutur, B. , and Bhat, N. , “System engineering and deployment of envirobat An urban air pollution monitoring device”, in Electronics, Computing and Communication Technologies (IEEE CONECCT), 2014 IEEE International Conference on, 2014, pp. 1-6.
Z. Yang, Zhang, Y. , Krishnamoorthy, S. , Nath, D. N. , Khurgin, J. B. , and Rajan, S. , “Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors”, in 2015 73rd Annual Device Research Conference (DRC), 2015, pp. 53-54.
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , “Determination of trap energy levels in AlGaN/GaN HEMT”, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.
Book Chapter
Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. , “III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)”, in High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.

Pages