| Title | Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors |
| Publication Type | Conference Paper |
| Year of Publication | 2015 |
| Authors | Yang, Z, Zhang, Y, Krishnamoorthy, S, Nath, DN, Khurgin, JB, Rajan, S |
| Conference Name | 2015 73rd Annual Device Research Conference (DRC) |
| Date Published | June |
| Keywords | DATE MURI project, DC current gain, emitter-base bias, gallium compounds, Gallium nitride, GaN, GaN tunneling hot electron transistors, HF amplifiers, high-frequency amplifiers, hot electron transistors, III-V semiconductors, Integrated circuits, Junctions, Monte Carlo methods, nickel, Office of Naval Research, semiconductor device models, size 10 nm, Transistors, tunnel transistors, Tunneling, voltage 8 V |
| Abstract | DC current gain greater than one was demonstrated in GaN tunneling hot electron transistors. At an emitter-base bias of 8 V, dc current gain is increased to 2.8. The results show the promise of GaN tunneling hot electron transistors for the next generation of high-frequency amplifiers. This work is funded by Office of Naval Research under the DATE MURI project (Program manager: Dr. Paul Maki). |
| DOI | 10.1109/DRC.2015.7175550 |
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