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Post-silicon options

We address various issues in scalability of Silicon CMOS technology. One particular emphasis is to develop high-k rare-earth metal oxides as gate dielectrics. We have been able to demonstrate sub-1nm EOT for Er2O3 and Gd2O3. We are also exploring TiO2 and other dielectrics for future DRAM integration.

Chairperson
Visiting Professor
Visiting Professor