2020
I. Guiney, Humphreys, C. J. , Sen, P. , Muralidharan, R. , Nath, D. N. , and , ,
“Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme”,
JVSTB, vol. 38, p. 032207, 2020.
K. P. Nagarjun, Prakash, R. , Vikram, B. S. , Arora, S. , Jeyaselvan, V. , Selvaraja, S. Kumar, and Supradeepa, V. R. ,
“Bandwidth scaling of silicon modulator-based combs using multi-carriers and frequency offset locking”,
OSA Continuum, vol. 3, pp. 921–928, 2020.
K. Narayanan Nampoothiri, Bobji, M. S. , and Sen, P. ,
“De-Icing Device With Self-Adjusting Power Consumption and Ice Sensing Capabilities”,
Journal of Microelectromechanical Systems, vol. 29, pp. 562–570, 2020.
H. Gupta, Nayak, B. , Roy, K. , Ashok, A. , Pratap, R. , and , ,
“Development of Micromachined Piezoelectric Near-Ultrasound Transducers for Data-over-Sound”, in
2020 IEEE International Ultrasonics Symposium (IUS), 2020.
R. Balasubramanian, Pal, S. , Rao, A. , Naik, A. , Chakraborty, B. , Maiti, P. K. , and Varma, M. ,
“DNA translocation through vertically stacked 2D layers of graphene & hexagonal Boron Nitride heterostructure nanopore”, 2020.
S. Srivatsa, Belthangadi, P. , Ekambaram, S. , Pai, M. , Sen, P. , Uhl, T. , Kumar, S. , Grabowski, K. , and Nayak, M. M. ,
“Dynamic response study of Ti 3 C 2-MXene films to shockwave and impact forces”,
RSC Advances, vol. 10, pp. 29147–29155, 2020.
S. Pal, Ramkumar, B. , Jugade, S. , Rao, A. , Naik, A. , Chakraborty, B. , and Varma, M. M. ,
“Effect of single nanoparticle-nanopore interaction strength on ionic current modulation”,
Sensors and Actuators B: Chemical, p. 128785, 2020.
B. S. Vikram, Prakash, R. , Nagarjun, K. P. , Singh, A. , Selvaraja, S. Kumar, and Supradeepa, V. R. ,
“Generation of a multi-wavelength source spanning the entire C-band by nonlinear spectral broadening of dual-carrier electro-optic frequency combs”,
OSA Continuum, vol. 3, pp. 2185–2194, 2020.
S. Rathkanthiwar, Kalra, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. ,
“Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling”,
Journal of Applied Physics, vol. 127, p. 205301, 2020.
A. Kalra, Rathkanthiwar, S. , Remesh, N. , Muralidharan, R. , Nath, D. , and Raghavan, S. ,
“Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon”, in
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020.
M. Pal, Dasgupta, D. , Somalwar, N. , Reshma, V. R. , Tiwari, M. , Teja, D. , Narayana, S. M. , Katke, A. , Jayshree, R. S. , Bhat, R. , and , ,
“Helical nanobots as mechanical probes of intra-and extracellular environments”,
Journal of Physics: Condensed Matter, vol. 32, p. 224001, 2020.
B. S. Vikram, Prakash, R. , Nair, D. , Selvaraja, S. Kumar, and Supradeepa, V. R. ,
“High repetition rate sub-picosecond pulse generation through compression of adaptively optimised frequency combs based on phase-modulated continuous wave lasers”, in
Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 2020.
R. K. Mech, Mohta, N. , Chatterjee, A. , Selvaraja, S. Kumar, Muralidharan, R. , and Nath, D. N. ,
“High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3”,
physica status solidi (a), vol. 217, p. 1900932, 2020.
U. Ul Muazzam, M Raghavan, S. , Pratiyush, A. Singh, Muralidharan, R. , Raghavan, S. , Nath, D. N. , and Shivashankar, S. A. ,
“High-responsivity (In0. 26Ga0. 74) 2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition”,
Journal of Alloys and Compounds, vol. 828, p. 154337, 2020.
Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. ,
“III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)”, in
High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. ,
“Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”,
Journal of Applied Physics, vol. 127, p. 215705, 2020.
A. Kalra, Rathkanthiwar, S. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. ,
“Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes”,
Semiconductor Science and Technology, vol. 35, p. 035001, 2020.
S. Kumar, Bin Dolmanan, S. , Tripathy, S. , Muralidharan, R. , and Nath, D. Neelim,
“Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors”,
physica status solidi (a), vol. 217, p. 1900766, 2020.
K. P. Nagarjun, Raj, P. , Jeyaselvan, V. , Selvaraja, S. Kumar, and Supradeepa, V. R. ,
“Microwave power induced resonance shifting of silicon ring modulators for continuously tunable, bandwidth scaled frequency combs”,
Optics Express, vol. 28, pp. 13032–13042, 2020.
N. Remesh, Kumar, S. , Guiney, I. , Humphreys, C. J. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias”,
physica status solidi (a), vol. 217, p. 1900794, 2020.
V. Mere, Dash, A. , Kallega, R. , Pratap, R. , Naik, A. , and Selvaraja, S. Kumar,
“On-chip silicon photonics based grating assisted vibration sensor”,
Optics Express, vol. 28, pp. 27495–27505, 2020.
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