S. Raghavan, Weng, X. , Dickey, E. , and Redwing, J. M. ,
“Correlation of Growth Stress and Structural Evolution During MOCVD of GaN on (111) Si”,
Applied Physics Letters, vol. 88, p. 41904, 2006.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , Vassen, R. , and Mayo, M. J. ,
“20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings”,
Journal of The American Ceramic Society, vol. 87, pp. 431-437, 2004.
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , and Mayo, M. J. ,
“The Effect of Grain Size, Porosity and Yttria Content on the Thermal Conductivity of nanocrystalline Zirconia”,
Scripta Materialia, vol. 39, pp. 1119-1125, 1998.
S. M Raghavan, Muralidharan, G. , Pramanik, A. , Shivashankar, S. A. , and Bhat, N. ,
“Ultra-sensitive H2S sensing at ppb concentrations by barely crystalline WOx/W thin film”,
Materials Research Express, vol. 6, p. 125907, 2019.