J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. ,
“Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”,
Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. ,
“Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”,
Applied Physics Letters, vol. 96, p. 123504, 2010.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. ,
“Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”,
Applied Physics Letters, vol. 96, p. 123504, 2010.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”,
Solid-State Electronics, vol. 137, pp. 117–122, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. ,
“Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”,
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. ,
“Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”,
ECS Transactions, vol. 80, pp. 101–107, 2017.
N. Mohan, , , Soman, R. , and Raghavan, S. ,
“Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”,
Journal of Applied Physics, vol. 118, p. 135302, 2015.