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Publications

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S. Seethamraju, Kumar, S. , Madras, G. , Raghavan, S. , and Ramamurthy, P. Chandrashe, Million-fold decrease in polymer moisture permeability by a graphene monolayer, ACS nano, vol. 10, pp. 6501–6509, 2016.
P. Sen and Kim, C. - J. , Microscale liquid-metal switches—a review, IEEE Transactions on Industrial Electronics, vol. 56, no. 4, pp. 1314–1330, 2009.
M. Sharma, Kumar, P. , Irzhak, A. V. , Kumar, S. , Pratap, R. , von Gratovski, S. V. , Shavrov, V. G. , and Koledov, V. V. , Melting and Electromigration in Thin Chromium Films, Physics of the Solid State, vol. 62, pp. 988–992, 2020.
M. P. Singh, Shalini, K. , Shivashankar, S. A. , Deepak, G. C. , Bhat, N. , and Shripathi, T. , Microstructure, crystallinity, and properties of low-pressure MOCVD-grown europium oxide films, Materials Chemistry and Physics, vol. 110, pp. 337-343, 2008.
J. Singh, Rajanna, K. , Umapathi, B. , Nayak, M. M. , and Nagachenchaiah, K. , MEMS based microactuator for microjet applications, in Sensors, 2011 IEEE, 2011, pp. 1129-1132.
H. C. Srinivasaiah and Bhat, N. , Monte Carlo Analysis of the Implant Dose Sensitivity in 0.1 nm NMOSFET, Solid-State Electronics, vol. 47/8, pp. 1379–1383, 2003.
H. C. Srinivasaiah and Bhat, N. , Mixed Mode Simulation Approach to Characterize the Circuit Delay Sensitivity to Implant Dose Variations, IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems, vol. 22, pp. 742–747, 2003.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
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G. Venugopal, Parmar, B. J. , Rajanna, K. , and Nayak, M. M. , Multi-point Sensing System for Plantar Pressure Measurement, in Sensors, 2007 IEEE, 2007, pp. 978-981.
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Z. Yang, Zhang, Y. , Krishnamoorthy, S. , Nath, D. N. , Khurgin, J. B. , and Rajan, S. , Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors, in 2015 73rd Annual Device Research Conference (DRC), 2015, pp. 53-54.

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