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Publications

Found 260 results
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S. Kumar, Bin Dolmanan, S. , Tripathy, S. , Muralidharan, R. , and Nath, D. Neelim, Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors, physica status solidi (a), vol. 217, p. 1900766, 2020.
A. Kalra, Rathkanthiwar, S. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes, Semiconductor Science and Technology, vol. 35, p. 035001, 2020.
S. Ghoshal and Kumar, P. S. A. , Magneto-Transport Study of Pure and Co Doped ZnO Thin Films, IEEE Transactions on Magnetics, vol. 48, pp. 3426-3429, 2012.
G. Patil, Vashist, E. , Kakoty, H. , Behera, J. , and Ghosh, A. , Magnetic nanohelices swimming in an optical bowl, Applied Physics Letters, vol. 119, p. 012406, 2021.
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S. Rammohan, Ramya, C. M. , S. Kumar, J. , Jain, A. , and Pratap, R. , Low frequency vibration energy harvesting using arrays of PVDF piezoelectric bimorphs, Journal of ISSS, vol. 3, pp. 18-27, 2014.
S. Tiwari, Kumar, R. , Dangi, A. , Dutta, S. , Pratap, R. , and , , Low Cost, Contamination-Free, and Damage-Free Fabrication of PZT MEMS on SOI Substrate, Journal of Micromechanics and Microengineering, 2021.
P. Sen and Kim, C. - J. , A liquid–solid direct contact low-loss RF micro switch, Journal of Microelectromechanical Systems, vol. 18, no. 5, pp. 990–997, 2009.
R. Pratap and Kundu, T. , A Least Square Finite Element Formulation for Elastodynamic Problems, International Journal of Numerical Methods in Engineering, vol. 26, pp. 1883–1891, 1988.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , Lateral energy band engineering of Al2O3/III-nitride interfaces, in 72nd Device Research Conference, 2014, pp. 131-132.
K. Murphy, Mackenzie, M. D. , Chi, H. , Varma, M. , Pal, P. , Paterson, L. , and Kar, A. K. , Laser micromachined SERS substrates in etched fused silica (Conference Presentation), in Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XVIII, 2018.
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D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. , Introducing Water Electrolithography, ACS Omega, 2021.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. , Introducing Water Electrolithography, ACS Omega, 2021.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for enhancement-mode GaN MISHEMT, IEEE Electron Device Letters, vol. 99, 2014.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces, Applied Physics Letters, vol. 102, p. 072105, 2013.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study, Phys. Rev. B, vol. 64, p. 155204, 2001.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , Integrated X-Band Inductor With a Nanoferrite Film Core, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , Insights on defect-mediated heterogeneous nucleation of graphene on copper, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , Insights on defect-mediated heterogeneous nucleation of graphene on copper, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.

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