E
X. Weng, Raghavan, S. , Acord, J. , Jain, A. , Dickey, E. , and Redwing, J. M. ,
“Evolution of Threading Dislocations in MOCVD-Grown GaN films on Si”,
Journal of Crystal Growth, vol. 300, pp. 217–222, 2007.
A. Jain, Raghavan, S. , and Redwing, J. M. ,
“Evolution of Surface Morphology and Film Stress during MOCVD growth of InN on Sapphire Substrates”,
Journal of Crystal Growth, vol. 269, pp. 128–133, 2004.
K. Manna, Joshi, R. S. , Elizabeth, S. , and Kumar, P. S. A. ,
“ Evaluation of the intrinsic magneto-dielectric coupling in LaMn0.5Co0.5O3 single crystals. ”,
Appl. Phys. Lett., vol. 104, p. 202905, 2014.
S. D. Vishwakarma, Pandey, A. K. , Parpia, J. M. , Southworth, D. R. , Craighead, H. G. , and Pratap, R. ,
“Evaluation of Mode Dependent Fluid Damping in a High Frequency Drumhead Microresonator”,
Journal of Microelectromechanical Systems, vol. 23, pp. 234-246, 2014.
H. Chandrasekar, Singh, M. , Raghavan, S. , and Bhat, N. ,
“Estimation of background carrier concentration in fully depleted GaN films”,
Semiconductor Science and Technology, vol. 30, p. 115018, 2015.
C. K. Reddy and Pratap, R. ,
“Equivalent Viscous Damping for a Bilinear Hysteretic Oscillator”,
ASEE Journal of Engineering Mechanics, vol. 126, 2000.
L. Ma, Nath, D. N. , Lee, II, E. W. , Lee, C. Hee, Yu, M. , Aerhart, A. , Rajan, S. , and Wu, Y. ,
“Epitaxial growth of large area single-crystalline few-layer {MoS}2 with high space charge mobility of 192 cm2/Vs”,
Applied Physics Letters, vol. 105, 2014.
S. Vura, Jeyaselvan, V. , Biswas, R. , Raghunathan, V. , Selvaraja, S. Kumar, and Raghavan, S. ,
“Epitaxial BaTiO3 on Si (100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer”,
ACS Applied Electronic Materials, 2021.
K. Chakraborty, Kumawat, N. , Sultana, S. , and Varma, M. M. ,
“Enhancing the quality factor of grating coupled plasmon resonance in optical recording media”,
Sensors and Actuators A: Physical, vol. 244, pp. 50–55, 2016.
A. Tripathy, Sreedharan, S. , Bhaskarla, C. , Majumdar, S. , Peneti, S. Kumar, Nandi, D. , and Sen, P. ,
“Enhancing the Bactericidal Efficacy of Nanostructured Multifunctional Surface Using an Ultrathin Metal Coating”,
Langmuir, vol. 33, pp. 12569–12579, 2017.
M. Shrivastava, Gupta, S. Dutta, Soni, A. , Raghavan, S. , and Bhat, N. ,
“Enhancement mode high electron mobility transistor (hemt)”. 2019.
S. Benedict and Bhat, N. ,
“Enhanced sensor life using UV treatment of sulphur poisoned Pt-PtOx”,
Materials Research Bulletin, vol. 112, pp. 236–241, 2019.
B. S. Vikram, Prakash, R. , Selvaraja, S. Kumar, and Supradeepa, V. R. ,
“Enhanced nonlinear spectral broadening and sub-picosecond pulse generation by adaptive spectral phase optimization of electro-optic frequency combs”,
Optics Express, vol. 28, pp. 11215–11226, 2020.
T. - H. Hung, Sasaki, K. , Kramata, A. , Nath, D. N. , Park, P. Sung, Polchinski, C. , and Rajan, S. ,
“Energy band line-up of atomic layer deposited Al2O3 on ?-Ga2O3”,
Applied Physics Letters, vol. 104, p. 162106, 2014.
P. Rawat, Nambiar, S. , Singh, R. , Selvaraja, S. Kumar, and , ,
“Embedded Silicon Gratings for High-efficiency Light-Chip Coupling to Thin Film Silicon Nitride Waveguides”, 2023.
S. Avasthi, Qi, Y. , Vertelov, G. , Schwartz, J. , Kahn, A. , and Sturm, J. C. ,
“Electronic structure and band alignment of 9, 10-phenanthrenequinone passivated silicon surfaces”,
Surface Science, vol. 605, p. 1308, 2011.
J. Yang, Cui, S. , Ma, T. P. , Hung, T. - H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. ,
“Electron tunneling spectroscopy of electrically active traps in AlGaN/GaN high electron mobility transistors”,
Applied Physics Letters, vol. 103, p. 223507, 2013.
D. N. Nath, Hsieh, E. , Keller, S. , DenBaars, S. , Mishra, U. K. , and Rajan, S. ,
“Electron Transport in Vicinal N-polar AlGaN/GaN heterostructures”,
Applied Physics Letters, vol. 97, p. 162106, 2010.
D. N. Nath, Ma, L. , Lee, C. H. , Lee, E. , Arehart, A. , Wu, Y. , and Rajan, S. ,
“Electron transport in large-area epitaxial MoS2”, in
72nd Device Research Conference, 2014, pp. 89-90.