K. Rajanna, Mohan, S. , Nayak, M. M. , Gunasekaran, N. , and Muthunayagam, A. E. ,
“Pressure transducer with Au-Ni thin-film strain gauges”,
IEEE Transactions on Electron Devices, vol. 40, pp. 521-524, 1993.
I. Raja, Banerjee, G. , Zeidan, M. A. , and Abraham, J. A. ,
“A 0.1 #x2013;3.5-GHz Duty-Cycle Measurement and Correction Technique in 130-nm CMOS”,
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, pp. 1975-1983, 2016.
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , and Mayo, M. J. ,
“The Effect of Grain Size, Porosity and Yttria Content on the Thermal Conductivity of nanocrystalline Zirconia”,
Scripta Materialia, vol. 39, pp. 1119-1125, 1998.
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , and Mayo, M. J. ,
“Thermal Properties of Trivalent and Pentavalent Co-doped Zirconia”,
Acta Materialia, vol. 49, pp. 169-179, 2001.
S. M Raghavan, Muralidharan, G. , Pramanik, A. , Shivashankar, S. A. , and Bhat, N. ,
“Ultra-sensitive H2S sensing at ppb concentrations by barely crystalline WOx/W thin film”,
Materials Research Express, vol. 6, p. 125907, 2019.
S. Raghavan, Weng, X. , Dickey, E. , and Redwing, J. M. ,
“Correlation of Growth Stress and Structural Evolution During MOCVD of GaN on (111) Si”,
Applied Physics Letters, vol. 88, p. 41904, 2006.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , Vassen, R. , and Mayo, M. J. ,
“20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings”,
Journal of The American Ceramic Society, vol. 87, pp. 431-437, 2004.