Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Publications

Found 57 results
[ Author(Asc)] Title Type Year
Filters: First Letter Of Title is I  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
Y
Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. , III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA), in High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.
V
D. Visser, Ye, Z. , Prajapati, C. S. , Bhat, N. , and Anand, S. , Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection, ECS Journal of Solid State Science and Technology, vol. 6, pp. P653–P659, 2017.
P. Lekshmy Venugopalan and Ghosh, A. , Investigating the Dynamics of the Magnetic Micromotors in Human Blood, Langmuir, 2020.
T
A. Tripathy, Pahal, S. , Mudakavi, R. J. , Raichur, A. M. , Varma, M. M. , and Sen, P. , Impact of Bioinspired Nanotopography on the Antibacterial and Antibiofilm Efficacy of Chitosan, Biomacromolecules, vol. 19, pp. 1340–1346, 2018.
S
S. Suran and Varma, M. , Imaging flow distribution through nanoporous polymer films using bright-field nanoscopy, Journal of Applied Physics, vol. 125, p. 165303, 2019.
R. Srinivasan and Bhat, N. , Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications, in 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, pp. 392-396.
R. Soman, Raghavan, S. , and Bhat, N. , An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
K. Sandeep Sharma, Jen, H. - T. , Li, S. - S. , and Pillai, G. , Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator, Journal of Micromechanics and Microengineering, vol. 32, p. 084004, 2022.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , Integrated X-Band Inductor With a Nanoferrite Film Core, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
R
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111), Journal of Applied Physics, vol. 127, p. 215705, 2020.
M. Ramanathan and Pratap, R. , Integration of a Compliant Thermal Actuator for Unlatching in a Mems Latch Accelerometer, in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019.
A. Raman and Ananthasuresh, G. K. , Improving a Dual-Probe Heat Pulse based soil moisture sensor using insulated nichrome wire, in Physics and Technology of Sensors (ISPTS), 2015 2nd International Symposium on, 2015, pp. 283-288.
S. Raghavan and Redwing, J. M. , Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan and Redwing, J. M. , In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
P
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
A. Paramanick, Roy, K. , Samanta, D. , Aiswarya, K. S. , Pratap, R. , and M Singh, S. , Image quality enhancement of PMUT-based photoacoustic imaging, in Photons Plus Ultrasound: Imaging and Sensing 2023, 2023.
A. Pandey and Selvaraja, S. Kumar, Internally-loaded ring resonator configuration for optical filter applications, CSI transactions on ICT, vol. 5, pp. 135–141, 2017.
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
N
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
M
N. Mohan, , , Soman, R. , and Raghavan, S. , Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes, Journal of Applied Physics, vol. 118, p. 135302, 2015.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs, Microelectronics Journal, vol. 55, pp. 143–151, 2016.

Pages