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Publications

Found 316 results
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2014
D. N. Nath, Ma, L. , Lee, C. H. , Lee, E. , Arehart, A. , Wu, Y. , and Rajan, S. , Electron transport in large-area epitaxial MoS2, in 72nd Device Research Conference, 2014, pp. 89-90.
T. - H. Hung, Sasaki, K. , Kramata, A. , Nath, D. N. , Park, P. Sung, Polchinski, C. , and Rajan, S. , Energy band line-up of atomic layer deposited Al2O3 on ?-Ga2O3, Applied Physics Letters, vol. 104, p. 162106, 2014.
L. Ma, Nath, D. N. , Lee, II, E. W. , Lee, C. Hee, Yu, M. , Aerhart, A. , Rajan, S. , and Wu, Y. , Epitaxial growth of large area single-crystalline few-layer {MoS}2 with high space charge mobility of 192 cm2/Vs, Applied Physics Letters, vol. 105, 2014.
N. Kumar, Soni, H. , Ramaswamy, S. , and Sood, A. K. , Flocking at a distance in active granular matter, Nature Communications, vol. 5, p. 4688, 2014.
S. Kumar, Duesberg, G. S. , Pratap, R. , and Raghavan, S. , Graphene Field Emission Devices, Applied Physics Letters, vol. 105, pp. 103-107, 2014.
A. Roychowdhury, Nandy, A. , Jog, C. S. , and Pratap, R. , Hybrid elements for modeling squeeze film effects coupled with structural interactions in vibratory MEMS devices, CMES: Computer Modeling in Engineering and Sciences, vol. 103, pp. 91-110, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for enhancement-mode GaN MISHEMT, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
A. N. Mallya and Ramamurthy, P. C. , Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies, Analyst, vol. 139, pp. 6456–6466, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , Lateral energy band engineering of Al2O3/III-nitride interfaces, in 72nd Device Research Conference, 2014, pp. 131-132.
S. Seethamraju, Rao, A. D. , Ramamurthy, P. C. , and Madras, G. , Layer-by-Layer Assembly of Nafion on Surlyn with Ultrahigh Water Vapor Barrier, Langmuir, vol. 30, pp. 14606–14611, 2014.
S. Seethamraju, Rao, A. D. , Ramamurthy, P. C. , and Madras, G. , Layer-by-Layer Assembly of Nafion on Surlyn with Ultrahigh Water Vapor Barrier, Langmuir, vol. 30, pp. 14606–14611, 2014.
S. Rammohan, Ramya, C. M. , S. Kumar, J. , Jain, A. , and Pratap, R. , Low frequency vibration energy harvesting using arrays of PVDF piezoelectric bimorphs, Journal of ISSS, vol. 3, pp. 18-27, 2014.
S. Rammohan, Ramya, C. M. , S. Kumar, J. , Jain, A. , and Pratap, R. , Low frequency vibration energy harvesting using arrays of PVDF piezoelectric bimorphs, Journal of ISSS, vol. 3, pp. 18-27, 2014.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
M. Agrawal, Jain, A. , Rao, D. V. Sridhar, Pandeya, A. , Goyala, A. , Kumara, A. , Lambaa, S. , Mehta, B. R. , Muraleedharan, K. , and Muralidharan, R. , Nanoharvesting of GaN nanowires on Si 211 substrates by plasma-assisted molecular beam epitaxy, Journal of Crystal Growth, vol. 402, 2014.
M. Laskar, Nath, D. N. , Ma, L. , Lee, E. , Lee, C. H. , Kent, T. , Yang, Z. , Mishra, R. , Roldan, M. A. , Idrobo, J. - C. , Pantelides, S. T. , Pennycook, S. J. , Myers, R. , Wu, Y. , and Rajan, S. , p-type doping of MoS2 thin films using Nb, Applied Physics Letters, vol. 104, p. 092104, 2014.
M. Laskar, Nath, D. N. , Ma, L. , Lee, E. , Lee, C. H. , Kent, T. , Yang, Z. , Mishra, R. , Roldan, M. A. , Idrobo, J. - C. , Pantelides, S. T. , Pennycook, S. J. , Myers, R. , Wu, Y. , and Rajan, S. , p-type doping of MoS2 thin films using Nb, Applied Physics Letters, vol. 104, p. 092104, 2014.
A. Rao, Karalatti, S. , Thomas, T. , and Ramamurthy, P. C. , Self-assembled, aligned ZnOnanorod buffer layers for high current density, inverted organic photovoltaics, ACS Applied Materials & Interfaces, vol. 6, pp. 16792–16799, 2014.
A. Rao, Karalatti, S. , Thomas, T. , and Ramamurthy, P. C. , Self-assembled, aligned ZnOnanorod buffer layers for high current density, inverted organic photovoltaics, ACS Applied Materials & Interfaces, vol. 6, pp. 16792–16799, 2014.
J. Safioui, Leo, F. , Kuyken, B. , Gorza, S. , Selvaraja, S. K. , Baets, R. , Emplit, P. , Roelkens, G. , and Massar, S. , Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths, Optics Express, vol. 22, pp. 3089–3097, 2014.
R. Muralidharan, Ramesh, V. , Mishra, P. , and Srinivasan, T. , Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy, Semiconductor Science and Technology, vol. 29, 2014.
R. B. Rao, Bhat, N. , and Sikdar, S. K. , Thick PECVD Germanium Films for MEMS Application. In Physics of Semiconductor Devices. Springer Verlag, 2014, pp. 469–471.

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