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Publications

Found 364 results
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Journal Article
S. K. Selvaraja, Sleeckx, E. , Schaekers, M. , Bogaerts, W. , Van Thourhout, D. , Dumon, P. , and Baets, R. , “Low-Loss Amorphous Silicon-On-Insulator Technology for Photonic Integrated Circuitry”, Optics Communications, vol. 282, pp. 1767–1770, 2009.
S. Benedict, Basu, P. Kumar, and Bhat, N. , “Low power gas sensor array on flexible acetate substrate”, Journal of Micromechanics and Microengineering, vol. 27, p. 075024, 2017.
S. Benedict, Basu, P. Kumar, and Bhat, N. , “Low power gas sensor array on flexible acetate substrate”, Journal of Micromechanics and Microengineering, vol. 27, p. 075024, 2017.
S. Benedict, Basu, P. Kumar, and Bhat, N. , “Low power gas sensor array on flexible acetate substrate”, Journal of Micromechanics and Microengineering, vol. 27, p. 075024, 2017.
S. K. Selvaraja, Bogaerts, W. , and Van Thourhout, D. , “Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement”, Optics Communications, vol. 284, pp. 2141–2144, 2011.
A. Banerjee, Ghatak, S. , and Sikdar, S. K. , “L-Lactate mediates neuroprotection against ischaemia by increasing TREK 1 channel expression in rat hippocampal astrocytes in vitro”, J Neurochem, vol. 138, pp. 265-281, 2016.
A. K. R. and Bhat, N. , “Linear transconductor with flipped voltage follower in 130 nm CMOS”, Analog Integr Circ Signal Processing, vol. 13, 2009.
U. Khandelwal, Sandilya, R. Satya, Rai, R. Kumar, Sharma, D. , Mahapatra, S. Rekha, Mondal, D. , Bhat, N. , Aetkuri, N. Phani, Avasthi, S. , Chandorkar, S. , and , , “Large electro-opto-mechanical coupling in VO2 neuristors”, Applied Physics Reviews, vol. 11, 2024.
S. Ghatak, Banerjee, A. , and Sikdar, S. K. , “Ischaemic concentrations of lactate increase TREK 1 channel activity by interacting with a single histidine residue in the carboxy terminal domain”, Journal of Physiology (Lond.), vol. 594, pp. 59–81, 2016.
D. Visser, Ye, Z. , Prajapati, C. S. , Bhat, N. , and Anand, S. , “Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection”, ECS Journal of Solid State Science and Technology, vol. 6, pp. P653–P659, 2017.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , “Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. , “Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”, Applied Physics Letters, vol. 96, p. 123504, 2010.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , “Integrated X-Band Inductor With a Nanoferrite Film Core”, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
R. Soman, Raghavan, S. , and Bhat, N. , “An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate”, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , “Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, p. 215705, 2020.

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